Ultrasonic Ranging Module SR-04

Ultrasonic Ranging Module Ultrasound Wave Detector Rp50000

Product Description
Voltage: DC5V;
Static current: Less than 2mA;
Output signal: Electric frequency signal, high level 5V, low level 0V;
Sensor angle: Not more than 15 degrees;
Detection distance: 2cm-450cm
High precision: Up to 0.3cm
PCB size: 4.5 * 2.0 CM

Parameter:
Center resonant frequency: 40kHz ±2kHz
Static capacitance: 3300P ± 300P
Resonant impedance: 120Ω±20Ω
Frequency bandwidth (-3dB): Δf-3dB ≥ 2kHz
Operation voltage: 300 ~ 500VP-P
Limit voltage ≤ 1000VP-P
Transmitting beam angle: 6O degrees
Operation temperature: -40 ~ +80 °c
Protection class: IP65
(1) the IO trigger ranging, to at least 10 us high level signal;
(2) module automatically send eight 40 KHZ of square wave, automatic testing if it has any signals return;
(3) a signal to return to, through the IO output top level, the high level of the last time is
From the launch ultrasonic returned to time. Test distance = (high level time * sound velocity (340 M/S)) / 2;
This module can be to provide a full range of ranging procedure: C51, PIC18F877, ultrasonic LCD1602 showed that ultrasonic LCD12864 display, digital pipe display, serial ports display, ranging reference program.

STC Minimum System Board

STC Minimum System Board   Rp25.000

Information
1) 40 pins all leads
2) Classic 51 minimum system, don’t welding
3) 11.0592M crystal
4) support chips: STC89C52, STC12C5A60S2, STC11/10x series, AT89S52 and the pins and the chip compatible chip
5) a power switch, convenient experiment.
6) DC-005 power socket (supporting the transposon 5.5*2.1)
7) outside extended 2 Road VCC, GND
8) board size: 6.5*3.1 cm

HGTP3N60A4

HGTP3N60A4 Rp35000

http://datasheet.octopart.com/HGTP3N60A4-Fairchild-datasheet-66020.pdf

600V, SMPS Series N-Channel IGBT
The HGTD3N60A4S and the HGTP3N60A4 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on-
state voltage drop varies only moderately between 25 o C and 150 o C.

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential.
This device has been
optimized for high frequency switch mode power
supplies

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