600V, SMPS Series N-Channel IGBT
The HGTD3N60A4S and the HGTP3N60A4 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on-
state voltage drop varies only moderately between 25 o C and 150 o C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential.
This device has been
optimized for high frequency switch mode power